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| savantic semiconductor product specification silicon npn power transistors 2SC1431 description with to-66 package excellent safe operating area applications for use in high frequency power amplifier applications. pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 110 v v ceo collector-emitter voltage open base 110 v v ebo emitter-base voltage open collector 5 v i c collector current 2 a p d total power dissipation t c =25 23 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-66) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC1431 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =50ma ;i b =0 110 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 5 v v cesat collector-emitter saturation voltage i c =1a; i b =0.1a 1.0 v v be sat base-emitter saturation voltage i c =1a; i b =0.1a 1.2 v i cbo collector cut-off current v cb =110v; i e =0 10 a i ebo emitter cut-off current v eb =5v; i c =0 10 a h fe dc current gain i c =0.4a ; v ce =2v 50 240 f t transition frequency i c =0.4a ; v ce =10v 30 mhz savantic semiconductor product specification 3 silicon npn power transistors 2SC1431 package outline fig.2 outline dimensions |
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